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	Semiconductor luminous element and manufacture thereof
	BETSUPU TATSUROU
	1982-12-07
著作权人	TOKYO SHIBAURA DENKI KK
专利号	JP1982199287A
国家	日本
文献子类	发明申请
其他题名	Semiconductor luminous element and manufacture thereof
英文摘要	PURPOSE:To manufacture the negative resistant semiconductor element provided with the reliable characteristics by a method wherein thickness of the semiconductor crystal layer is capacitated for arcing into the stripe type at specified region by means of the impressed voltage as specified. CONSTITUTION:The stripe type mesa 2 is formed on the n type GaAs substrate crystal 1 not yet immersed in the liquidus growing boat while the liquidus growing solution is specified to be the Ga solution containing the p type impurities saturated with As. Then the Ga solution is liquidus grown at the specified temperature and cooling speed separating the p type GaAs layer 14 on the n type GaAs substrate crystal Then after the n type GaAlAs layer 4, p or n type GaAs layer 5, p type GaAlAs layer 6 are successively crystal formed by the solution contaiing the different dopants, the semiconductor crystal layer is separated at the central part of the cavity of the mesa 2.
公开日期	1982-12-07
申请日期	1981-06-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62826]
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA DENKI KK
推荐引用方式 GB/T 7714	BETSUPU TATSUROU. Semiconductor luminous element and manufacture thereof. JP1982199287A. 1982-12-07.

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