QQ客服 官方微博 反馈留言

	Vapor-phase growing device for compound semiconductor
	IWAMOTO MASAMI; KONNO KUNIAKI; BETSUPU TATSUROU
	1982-02-13
著作权人	TOKYO SHIBAURA ELECTRIC CO
专利号	JP1982027016A
国家	日本
文献子类	发明申请
其他题名	Vapor-phase growing device for compound semiconductor
英文摘要	PURPOSE:To accomplish the multilayer vapor-phase growth having a steep compositional change by a method wherein the control stick, which was bent on the side where substrate support is coupled, is rotated along the center axis of a reaction tube and a crystalline substrate is shifted between two vapor-phase growing chambers for a short time. CONSTITUTION:The upper and lower vapor-phase growing chambers are provided by dividing a quartz reaction tube 2-2 using a partition plate 2-5. On the other hand, one side of a quartz control stick 2-7, extending along the center axis of the reaction tube 2-2, is bent and at the point of which, a quartz support 2-8 which is fixing the crystalline substrate 206 is coupled. Then, the substrate 2-6 is arranged on the crystal deposited region A of each vapor-phase growing chamber, wherein reaction gas having a different composition is flowing, the control stick 2-7 is rotated for the center axis at the same time, and each vapor-phase growing chamber is shifted. Through these procedures, the crystalline substrate can be shifted between each vapor-phase growing chamber in a very short time, thereby enabling to accomplish the growing of multilayer vapor-phase having a steep compositional change.
公开日期	1982-02-13
申请日期	1980-07-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62800]
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	IWAMOTO MASAMI,KONNO KUNIAKI,BETSUPU TATSUROU. Vapor-phase growing device for compound semiconductor. JP1982027016A. 1982-02-13.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。