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	Method of modulating semiconductor laser at high speed
	ROI RANGU
	1981-01-09
著作权人	NIPPON ELECTRIC CO
专利号	JP1981001590A
国家	日本
文献子类	发明申请
其他题名	Method of modulating semiconductor laser at high speed
英文摘要	PURPOSE:To enable high speed modulation in a semiconductor laser by dividing a multilayered semiconductor element containing active layer into two narrow grooves passing through the active layer at the center, exciting one with constant current and exicting the other with modulated current while implanting part of the output of one groove to the other. CONSTITUTION:Both end faces 5 of a multilayer architecture stripe type semiconductor laser element 1 containing active layer 6 are cut to be opened, and narrow groove 2 is formed into the substrate to pass through the active layer 6 in parallel with the end faces 5 at the center by an ion milling or the like to divide the active layer 6 into two. Then, independent electrodes 3 and 4 are formed on the upper surface corresponding to the respective active layers 6, and a heat sink operating also as a confronting electrode is adhered onto the back surface of the substrate. The laser element is thus constructed, one laser is excited with constant current, part of the power from this laser is implanted to the active layer 6 of the other laser, in which state the other laser is excited with modulated current to provide a modulated output having no waveform deterioration nor charging phenomenon.
公开日期	1981-01-09
申请日期	1979-12-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62786]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	ROI RANGU. Method of modulating semiconductor laser at high speed. JP1981001590A. 1981-01-09.

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