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	Inspection of semiconductor laser
	TADA KATSUHISA; YAMASHITA KOJI
	1992-07-28
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1992206944A
国家	日本
文献子类	发明申请
其他题名	Inspection of semiconductor laser
英文摘要	PURPOSE:To lower a load TS of harmonic distortion inspection and to raise an yield by applying a DC bias and low frequency modulation signal to a chip and measure harmonic distortion to select good and defective chips. CONSTITUTION:A DC bias is applied to a chip 1 with a DC power supply 4 and a modulation signal as low as about 100Hz is applied also thereto with a signal generator 5. In this case, a photodiode 6 receives a modulation beam from the chip and its electrical signal is inputted to a spectrum analyzer 7. Next, the waveforms of signal intensity in the frequency of 100Hz, signal intensity in the frequency of 200Hz and signal intensity in the frequency of 300Hz on the spectrum analyzer 7 are observed, harmonic distortion such as 2nd order distortion H2, 3rd order distortion H3, etc., is obtained and good and defective chips are selected under the condition that the measuring result of harmonic distortion are as follow; H2>60dBc, H3>70dBc. The yield of harmonic distortion inspection after packing the chip into a package is raised and thereby a load TS of harmonic distortion inspection is lowered.
公开日期	1992-07-28
申请日期	1990-11-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62628]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	TADA KATSUHISA,YAMASHITA KOJI. Inspection of semiconductor laser. JP1992206944A. 1992-07-28.

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