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	Inspection method for semiconductor laser
	OBE ISAO; TODOROKI SATORU
	1986-12-11
著作权人	HITACHI LTD
专利号	JP1986281570A
国家	日本
文献子类	发明申请
其他题名	Inspection method for semiconductor laser
英文摘要	PURPOSE:To decide the nondefectives or defectives of semiconductor-laser wafers by detecting discharge currents generated from the semiconductor-laser wafers by applying pulse-shaped voltage between electrodes. CONSTITUTION:A whole surface electrode is formed onto the surface of a substrate as a semiconductor-laser wafer 5 and partial electrodes 3 onto the surface on the side reverse to the substrate in a striped manner, and the wafer 5 prepared in this manner is connected to an external circuit through a prober 4. The external circuit consists of a power supply 1 and a current detector 2 connected in series with the power supply Pulse voltage is applied to the semiconductor-laser wafer by the power supply 1, and an optical output is detected by a photodiode composed of Ge. When a threshold current value is increased, discharge currents are reduced, and negative correlation is generated. Accordingly, the threshold current values of laser oscillations can be determined under the state of wafers without cleavage by measuring the discharge currents of the semiconductor-laser wafers, thus deciding nondefectives or defectives by the threshold currents values at the step of the wafer.
公开日期	1986-12-11
申请日期	1985-06-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62602]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OBE ISAO,TODOROKI SATORU. Inspection method for semiconductor laser. JP1986281570A. 1986-12-11.

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