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	Methods and apparatus for detecting impurities in semiconductors
	CARVER, GARY ERNEST; MICHALSKI, JOHN DENNIS; KOOS, GREGORY LEE
	1991-04-17
著作权人	AT&T CORP.
专利号	EP0422780A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Methods and apparatus for detecting impurities in semiconductors
英文摘要	The purpose of the invention is to detect impurities in a semiconductor wafer (20). A laser (21) forms a light beam having a high proportion of its power at an optical frequency capable of being absorbed by the impurity to be measured. The beam is split into first (25) and second (26) light components, one of which is directed at the surface of the semiconductor wafer (20) to be tested and the other at a reference semiconductor wafer (27) containing a known quantity of the impurity to be measured. The light intensities reflected from the two wafers is detected by photodetectors (29, 30) and their difference is taken as a factor in measuring the impurity density in the wafer under test. A polarizer (33) polarizes the beam such as to maximize p-type component and minimize s-type components. Reflection from each of the two wafers (20, 27) is at the principal angle.
公开日期	1991-04-17
申请日期	1990-09-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62430]
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	CARVER, GARY ERNEST,MICHALSKI, JOHN DENNIS,KOOS, GREGORY LEE. Methods and apparatus for detecting impurities in semiconductors. EP0422780A2. 1991-04-17.

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