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	Transistor laser optical switching and memory techniques and devices
	FENG, MILTON; HOLONYAK, JR., NICK; WU, MONG-KAI
	2016-01-21
著作权人	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
专利号	US20160020579A1
国家	美国
文献子类	发明申请
其他题名	Transistor laser optical switching and memory techniques and devices
英文摘要	A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring-shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity.
公开日期	2016-01-21
申请日期	2015-05-26
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62019]
专题	半导体激光器专利数据库
作者单位	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
推荐引用方式 GB/T 7714	FENG, MILTON,HOLONYAK, JR., NICK,WU, MONG-KAI. Transistor laser optical switching and memory techniques and devices. US20160020579A1. 2016-01-21.

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