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	Semiconductor laser modulation device
	ABE HIDEAKI
	1991-01-28
著作权人	NEC CORP
专利号	JP1991019146A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser modulation device
英文摘要	PURPOSE:To attain highly stable optical modulation on a transitional basis and on a long-term basis by providing two amplifiers which separately amplify a bias current and a modulation current and a switch circuit which switches the modulation current at high speed and controlling the fluctuation of optical output owing to transitional temperature change. CONSTITUTION:The title device consists of a highly precise and high speed amplifier 5 amplifying a signal converted into an electric signal in a sensor part, a holding circuit 6 storing a voltage corresponding to light intensity at the time of natural light emission, a holding circuit 7 storing a signal correspond ing to intense light outputted from a laser 3 when the modulation current is turned on, a generation circuit 8 for two reference voltages which are to be set as the reference of two-kinds of holding signals, two amplifiers 9 and 10 amplifying the reference voltages and a holding voltage error and outputting the bias current and a modulation current value signal and an ECL circuit switching the modulation current at high speed. Then, both the bias current and the modulation current are controlled for the change of a current-to-optical output characteristic. Thus, highly stable optical modulation is attained on a transitional basis and on a long-term basis.
公开日期	1991-01-28
申请日期	1989-06-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/59636]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ABE HIDEAKI. Semiconductor laser modulation device. JP1991019146A. 1991-01-28.

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