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	Method and device for controlling light emitting intensity of semiconductor laser element
	HAYASHI SHIGEO
	1990-08-06
著作权人	株式会社リコー
专利号	JP1990197870A
国家	日本
文献子类	发明申请
其他题名	Method and device for controlling light emitting intensity of semiconductor laser element
英文摘要	PURPOSE:To control light emitting intensity in the line unit of a recording image light beam with accuracy by changing the command value of the light emitting intensity step by step, also calculating the deviation between a detection value and the set value of the light emitting intensity and setting the command value so that the smaller deviation may be kept in the relation between both. CONSTITUTION:In a control part 1, at the point of time of starting to control (t0), the command value CI is made to be '0' and the output intensity of a laser diode 2 is set '0' at an initial setting, since then, the command value CI is made to rise step by step with a fixed time cycle. And, when the output intensity exceeds a prescribed value LR at the point of time (t1), the command value CI is made to be stepped down by one step so as to become smaller than the prescribed value LR, then, the command value is made to be stepped up by one step so as to become larger than the prescribed value LR; the action is repeatedly performed by the prescribed number of times. When the action for reversing the relation between the sizes of the prescribed value LR and the command value CI by the prescribed number of times is finished, at the point of the time (t2) when the action is finished, the command value CI is set so that the state in which the smaller deviation is kept, the deviation ERp when the output intensity is larger than the prescribed value LR or the deviation EPm when the output intensity is smaller than the prescribed value LR may be secured.
公开日期	1990-08-06
申请日期	1989-02-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/59617]
专题	半导体激光器专利数据库
作者单位	株式会社リコー
推荐引用方式 GB/T 7714	HAYASHI SHIGEO. Method and device for controlling light emitting intensity of semiconductor laser element. JP1990197870A. 1990-08-06.

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