| Phase-locked array semiconductor laser | |
| TATENO KIMIO; TSUNODA YOSHITO | |
| 1987-07-01 | |
| 著作权人 | HITACHI LTD |
| 专利号 | JP1987147790A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Phase-locked array semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a far-field pattern of single peak by applying thin films which offer phase shift of lambda/2 on every other oscillation edge planes. CONSTITUTION:On an edge plane 4 of phase-locked array laser, thin films 5 which causes phase shift of lambda/2 are applied on every other light emitting points to make a phase 6 of a wave front of a projected beam flat. For example, there is a method in which SiO2 is applied by sputtering and this is easy. The thickness is determined so that an optical path length, i.e. a refractive index multiplied by the thickness becomes equal to lambda/2. If the phase becomes flat by such a method, a far-field pattern 7 of the projected beam becomes what has a single peak. If this is applied to an optical system in a laser beam printer or an optical disc, the beam of extremely high output can be obtained with high efficiency. |
| 公开日期 | 1987-07-01 |
| 申请日期 | 1985-12-23 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59441]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TATENO KIMIO,TSUNODA YOSHITO. Phase-locked array semiconductor laser. JP1987147790A. 1987-07-01. |
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