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	Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory
	HAYAKAWA, JUN; YAMANOUCHI, MICHIHIKO
	2010-09-10
著作权人	HITACHI, LTD.
专利号	WO2010100678A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory
英文摘要	Provided are a tunnel magnetic recording element and a low-power-consumption volatile memory using the same with the occurrence of write error reduced when magnetic information is read out. When information is read out, an exchange-coupling magnetic field is modulated by the applying of electric field or the emission light to increase a damping constant α of a magnetic recording layer (2002), thereby reducing the rate of write error at the time of reading. A means that modulates the exchange-coupling magnetic field puts a multiferroics layer near the magnetic recording layer of the tunnel magnetic recording element and applies an electric field, or includes a laser diode in the magnetic recording layer via an antiferromagnetic layer and emits a laser beam. For writing, a spin transfer torque that is activated by the current flowing through a magnetic fixed layer, a tunnel barrier layer, and the magnetic recording layer is used. For reading, the direction of magnetization of the magnetic recording layer is electrically detected using the tunnel magneto-resistance effect.
公开日期	2010-09-10
申请日期	2009-03-06
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/58401]
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	HAYAKAWA, JUN,YAMANOUCHI, MICHIHIKO. Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory. WO2010100678A1. 2010-09-10.

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