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	Devices with quantum dots
	LIANG, DI; KURCZVEIL, GEZA; BEAUSOLEIL, RAYMOND G.; FIORENTINO, MARCO
	2019-03-21
著作权人	HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
专利号	US20190089129A1
国家	美国
文献子类	发明申请
其他题名	Devices with quantum dots
英文摘要	An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.
公开日期	2019-03-21
申请日期	2018-09-14
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57738]
专题	半导体激光器专利数据库
作者单位	HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
推荐引用方式 GB/T 7714	LIANG, DI,KURCZVEIL, GEZA,BEAUSOLEIL, RAYMOND G.,et al. Devices with quantum dots. US20190089129A1. 2019-03-21.

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