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	Electro-optical and optoelectronic devices
	HAHN, UTZ HERWIG; SEIFRIED, MARC
	2018-08-23
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	US20180240820A1
国家	美国
文献子类	发明申请
其他题名	Electro-optical and optoelectronic devices
英文摘要	The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation.
公开日期	2018-08-23
申请日期	2017-02-22
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57557]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	HAHN, UTZ HERWIG,SEIFRIED, MARC. Electro-optical and optoelectronic devices. US20180240820A1. 2018-08-23.

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