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	Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device
	SHIBATA, TOMOHIKO; ASAI, KEIICHIRO; NAGAI, TERUYO; TANAKA, MITSUHIRO
	2002-03-07
著作权人	NGK INSULATORS, LTD.
专利号	US20020028343A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device
英文摘要	A semiconductor device has a substrate body, an AlxGayInzN (x+y+z=1,x,y,z>=0) film epitaxially grown direct on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the rear surface of the substrate body. In the case of the manufacturing the semiconductor device, the substrate body is heated, by a heater, uniformly and efficiently through the thermal radiation of the heater.
公开日期	2002-03-07
申请日期	2001-03-20
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/56500]
专题	半导体激光器专利数据库
作者单位	NGK INSULATORS, LTD.
推荐引用方式 GB/T 7714	SHIBATA, TOMOHIKO,ASAI, KEIICHIRO,NAGAI, TERUYO,et al. Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device. US20020028343A1. 2002-03-07.

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