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	Method and apparatus for producing group-III nitrides
	KRYLIOUK, OLGA
	2001-07-05
著作权人	UNIVERSITY OF FLORIDA
专利号	US20010006845A1
国家	美国
文献子类	发明申请
其他题名	Method and apparatus for producing group-III nitrides
英文摘要	The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGa1-x-y N (where 0<=x<=1, 0<=y<=1, and 0<=x+y<=1). In a specific embodiment, GaN substrates, with low dislocation densities (~107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.
公开日期	2001-07-05
申请日期	2000-12-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/56495]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF FLORIDA
推荐引用方式 GB/T 7714	KRYLIOUK, OLGA. Method and apparatus for producing group-III nitrides. US20010006845A1. 2001-07-05.

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