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	Growth of semi-insulating indium phosphide by liquid phase epitaxy
	KNIGHT, DOUGLAS GORDON; BENYON, WILLIAM
	1991-11-13
著作权人	NORTHERN TELECOM LIMITED
专利号	EP0344904A3
国家	欧洲专利局
文献子类	发明申请
其他题名	Growth of semi-insulating indium phosphide by liquid phase epitaxy
英文摘要	In a method for Liquid Phase Epitaxy (LPE) of semi-­insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperatures below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.
公开日期	1991-11-13
申请日期	1989-04-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/56485]
专题	半导体激光器专利数据库
作者单位	NORTHERN TELECOM LIMITED
推荐引用方式 GB/T 7714	KNIGHT, DOUGLAS GORDON,BENYON, WILLIAM. Growth of semi-insulating indium phosphide by liquid phase epitaxy. EP0344904A3. 1991-11-13.

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