Iii-nitride surface-emitting laser and method of fabrication
FORMAN, CHARLES; LEE, SEUNGGEUN; YOUNG, ERIN; KEARNS, JARED; DENBAARS, STEVEN P.; SPECK, JAMES S.; NAKAMURA, SHUJI
2019-04-11
著作权人THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
专利号WO2019070719A1
国家世界知识产权组织
文献子类发明申请
其他题名Iii-nitride surface-emitting laser and method of fabrication
英文摘要A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7λ or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
公开日期2019-04-11
申请日期2018-10-02
状态未确认
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/55161]  
专题半导体激光器专利数据库
作者单位THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式
GB/T 7714
FORMAN, CHARLES,LEE, SEUNGGEUN,YOUNG, ERIN,et al. Iii-nitride surface-emitting laser and method of fabrication. WO2019070719A1. 2019-04-11.
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