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	Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
	RYOU, JAE-HYUN; SHERVIN, SHAHAB; KIM, SEUNG HWAN
	2019-02-07
著作权人	UNIVERSITY OF HOUSTON SYSTEM
专利号	US20190044307A1
国家	美国
文献子类	发明申请
其他题名	Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
英文摘要	Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
公开日期	2019-02-07
申请日期	2018-09-29
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54922]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF HOUSTON SYSTEM
推荐引用方式 GB/T 7714	RYOU, JAE-HYUN,SHERVIN, SHAHAB,KIM, SEUNG HWAN. Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same. US20190044307A1. 2019-02-07.

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