Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods | |
ODNOBLYUDOV, VLADIMIR; SCHUBERT, MARTIN F.; SCHELLHAMMER, SCOTT D.; FREI, JEREMY S. | |
2013-07-11 | |
著作权人 | MICRON TECHNOLOGY, INC. |
专利号 | US20130175560A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods |
英文摘要 | Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts. |
公开日期 | 2013-07-11 |
申请日期 | 2012-01-09 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/54296] |
专题 | 半导体激光器专利数据库 |
作者单位 | MICRON TECHNOLOGY, INC. |
推荐引用方式 GB/T 7714 | ODNOBLYUDOV, VLADIMIR,SCHUBERT, MARTIN F.,SCHELLHAMMER, SCOTT D.,et al. Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods. US20130175560A1. 2013-07-11. |
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