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	Vertically-coupled surface-etched grating dfb laser
	WATSON, CHRISTOPHER; PIMENOV, KIRILL; TOLSTIKHIN, VALERY; WU, FANG; LOGVIN, YURY
	2012-05-03
著作权人	ELECTROPHOTONIC-IC INC.
专利号	US20120106583A1
国家	美国
文献子类	发明申请
其他题名	Vertically-coupled surface-etched grating dfb laser
英文摘要	A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.
公开日期	2012-05-03
申请日期	2010-11-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54192]
专题	半导体激光器专利数据库
作者单位	ELECTROPHOTONIC-IC INC.
推荐引用方式 GB/T 7714	WATSON, CHRISTOPHER,PIMENOV, KIRILL,TOLSTIKHIN, VALERY,et al. Vertically-coupled surface-etched grating dfb laser. US20120106583A1. 2012-05-03.

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