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	Laterally-integrated waveguide photodetector apparatus and related coupling methods
	AHN, DONGHWAN; LIU, JIFENG; MICHEL, JURGEN; KIMERLING, LIONEL C.
	2007-05-10
著作权人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY
专利号	US20070104441A1
国家	美国
文献子类	发明申请
其他题名	Laterally-integrated waveguide photodetector apparatus and related coupling methods
英文摘要	High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
公开日期	2007-05-10
申请日期	2005-11-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/53744]
专题	半导体激光器专利数据库
作者单位	MASSACHUSETTS INSTITUTE OF TECHNOLOGY
推荐引用方式 GB/T 7714	AHN, DONGHWAN,LIU, JIFENG,MICHEL, JURGEN,et al. Laterally-integrated waveguide photodetector apparatus and related coupling methods. US20070104441A1. 2007-05-10.

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