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	High power semiconductor laser lighting device
	SU, SHENG-PIN; YU, CHUN-KUN; WU, DANIEL JIH HUAH
	2005-11-17
著作权人	EINS OE-TECH CO., LTD.
专利号	US20050254537A1
国家	美国
文献子类	发明申请
其他题名	High power semiconductor laser lighting device
英文摘要	A high power semiconductor laser lighting device has a housing, a fan module arranged in an exhaust hole in the housing, a base connected to the bottom wall of the housing and disposed on a side of the fan module, and a semiconductor laser constant-temperature module. The base has a driving unit with at least one high power electronic component connected to fins of the fan module. The semiconductor laser constant-temperature module has a metallic partition to enclose a vacuum formed in a front portion of the housing, and a heat insulation layer arranged in the vacuum. The metallic partition has a side connecting the heat dissipation plate and an opposite side connecting a heating portion of a thermoelectric cooling chip, which includes a cooling portion connecting to a semiconductor laser lighting module. The high power semiconductor laser lighting device to keep an output power thereof constant within various environments.
公开日期	2005-11-17
申请日期	2004-05-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/53333]
专题	半导体激光器专利数据库
作者单位	EINS OE-TECH CO., LTD.
推荐引用方式 GB/T 7714	SU, SHENG-PIN,YU, CHUN-KUN,WU, DANIEL JIH HUAH. High power semiconductor laser lighting device. US20050254537A1. 2005-11-17.

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