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	Nitride semiconductor device comprising bonded substrate and fabrication method of the same
	NAGAHAMA, SHINICHI; SANO, MASAHIKO; YANAMOTO, TOMOYA; SAKAMOTO, KEIJI; YAMAMOTO, MASASHI; MORITA, DAISUKE
	2004-01-28
著作权人	NICHIA CORPORATION
专利号	EP1385215A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Nitride semiconductor device comprising bonded substrate and fabrication method of the same
英文摘要	A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
公开日期	2004-01-28
申请日期	2003-07-08
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/53075]
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	NAGAHAMA, SHINICHI,SANO, MASAHIKO,YANAMOTO, TOMOYA,et al. Nitride semiconductor device comprising bonded substrate and fabrication method of the same. EP1385215A2. 2004-01-28.

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