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	Semiconductor laser module and method for simultaneously reducing relative intensity noise (RIN) ans stimulated brillouin scattering (SBS)
	TSUKIJI, NAOKI; YOSHIDA, JUNJI; KIMURA, TOSHIO; KADO, SOUKO
	2003-04-10
著作权人	FURUKAWA ELECTRIC CO., LTD., THE
专利号	US20030067952A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser module and method for simultaneously reducing relative intensity noise (RIN) ans stimulated brillouin scattering (SBS)
英文摘要	A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.
公开日期	2003-04-10
申请日期	2002-09-23
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52848]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式 GB/T 7714	TSUKIJI, NAOKI,YOSHIDA, JUNJI,KIMURA, TOSHIO,et al. Semiconductor laser module and method for simultaneously reducing relative intensity noise (RIN) ans stimulated brillouin scattering (SBS). US20030067952A1. 2003-04-10.

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