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	Monolithically integrated photonic circuit
	BLOEMER, MARK J.; MYNENI, KRISHNA
	2002-10-10
著作权人	ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE
专利号	US20020146191A1
国家	美国
文献子类	发明申请
其他题名	Monolithically integrated photonic circuit
英文摘要	In the monolithically integrated photonic circuit, light travels through multiple quantum well channel waveguides and is coupled into and out of the devices that reside in common on a single semiconductor substrate. Each device, which is co-planar with any other device on the substrate, is comprised of a quantum well channel waveguide of a pre-determined length and an electrical contact pad mounted on the waveguide that facilitates the application of electric field to the device. The function of any particular device as an optical source, an optical modulator or a photo-detector is determined by the bias mode of electric field applied to that particular device. The circuit is comprised of multiple rows of such devices. Each of these rows contains at least three devices which function as an optical source, an optical modulator and a photo-detector, respectively, and are separated from each other by electrical isolation gaps.
公开日期	2002-10-10
申请日期	2002-05-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52732]
专题	半导体激光器专利数据库
作者单位	ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE
推荐引用方式 GB/T 7714	BLOEMER, MARK J.,MYNENI, KRISHNA. Monolithically integrated photonic circuit. US20020146191A1. 2002-10-10.

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