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	Low cost high integrity diode laser array
	PINNEO, GEORGE G.; GRGAS, MARIJAN D.; BENNETT, KRISS A.
	2002-12-05
著作权人	TRW INC.
专利号	US20020181523A1
国家	美国
文献子类	发明申请
其他题名	Low cost high integrity diode laser array
英文摘要	A semiconductor laser diode array including a plurality of laser diode bars, each carried by a submount and forming a subassembly. Each subassembly is separated by a flexible or compliant electrically conductive spacer. All connections within the array are by way of a non-fluxed solder, that may be hard and/or soft, reflowed in a non-oxidizing atmosphere in a simple mechanical stack fixture to create nearly void-free solder joints with relatively high thermal integrity and electrical conductivity. Flexible electrically conductive spacers are disposed between the subassemblies to eliminate tensile stress on the laser diode bars while providing electrical conductivity between subassemblies. The subassemblies are carried by a thermally conductive dielectric substrate, allowing waste heat generated from the bars to be conducted to a cooling device. The invention eliminates known failure modes in interconnections, minimizing tensile strength on the diode arrays, and increasing the useful life of the array.
公开日期	2002-12-05
申请日期	2001-05-29
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52449]
专题	半导体激光器专利数据库
作者单位	TRW INC.
推荐引用方式 GB/T 7714	PINNEO, GEORGE G.,GRGAS, MARIJAN D.,BENNETT, KRISS A.. Low cost high integrity diode laser array. US20020181523A1. 2002-12-05.

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