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	Frequency doubled semiconductor laser having heat spreader on SHG crystal
	HUGHES, LAWRENCE, CHARLES, JR.; PIECH, GARRETT, A
	2012-02-02
著作权人	CORNING INCORPORATED
专利号	WO2012015724A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Frequency doubled semiconductor laser having heat spreader on SHG crystal
英文摘要	A hybrid laser hybrid laser comprises a semiconductor laser (50) supported directly or indirectly on a package substrate (20), a frequency- doubling crystal (60) supported via a first surface thereof on a supporting surface of a thermally conductive support (40) connected to the package substrate, with the crystal positioned so as to be able to receive light from the laser, and a thermally conductive heat spreader element (80) mounted on a second surface of the crystal. The thermally conductive element has a thermal conductivity greater than a thermal conductivity of the crystal, desirably at least 100W/mK or even 300W/mK. The thermally conductive element is not connected to the package substrate or to the thermally conductive support. While the thermally conductive element or "heat spreader" does not act directly to cool the crystal by conducting heat away, it acts to increase the uniformity of the temperature of the crystal, allowing the crystal to achieve higher light conversion efficiencies while remaining within the constraints of the folded-path hybrid laser package. The preferred simple slab structure of the thermally conductive element allows for a very easily manufactured laser package and structure.
公开日期	2012-02-02
申请日期	2011-07-25
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/51697]
专题	半导体激光器专利数据库
作者单位	CORNING INCORPORATED
推荐引用方式 GB/T 7714	HUGHES, LAWRENCE, CHARLES, JR.,PIECH, GARRETT, A. Frequency doubled semiconductor laser having heat spreader on SHG crystal. WO2012015724A1. 2012-02-02.

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