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	Semiconductor laser devices and methods
	FENG, MILTON; HOLONYAK, NICK; CHAN, RICHARD; WALTER, GABRIEL
	2007-09-27
著作权人	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
专利号	US20070223547A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser devices and methods
英文摘要	A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
公开日期	2007-09-27
申请日期	2005-02-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/51469]
专题	半导体激光器专利数据库
作者单位	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
推荐引用方式 GB/T 7714	FENG, MILTON,HOLONYAK, NICK,CHAN, RICHARD,et al. Semiconductor laser devices and methods. US20070223547A1. 2007-09-27.

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