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	High coherent power, two-dimensional surface�emitting semiconductor diode array laser
	BOTEZ, DAN
	2003-09-02
著作权人	WISCONSIN ALUMINI RESEARCH FOUNDATION
专利号	AU2003207591A1
国家	澳大利亚
文献子类	发明申请
其他题名	High coherent power, two-dimensional surface�emitting semiconductor diode array laser
英文摘要	A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings and a central phase shift in the distributed feedback grating. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array. A two­dimensional semiconductor array laser may be formed of four or more of the semiconductor array devices arranged on the substrate to provide long range coherent coupling via traveling waves of light between the device elements.
公开日期	2003-09-02
申请日期	2003-01-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/51367]
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMINI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN. High coherent power, two-dimensional surface�emitting semiconductor diode array laser. AU2003207591A1. 2003-09-02.

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