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	Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
	TOHRU TAKIGUCHI; KATSUHIKO GOTO; HIROTAKA KIZUKI
	1995-02-16
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	NL9401192A
国家	荷兰
文献子类	发明申请
其他题名	Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
英文摘要	A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs, during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
公开日期	1995-02-16
申请日期	1994-07-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50902]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	TOHRU TAKIGUCHI,KATSUHIKO GOTO,HIROTAKA KIZUKI. Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.. NL9401192A. 1995-02-16.

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