Refractive index modulation type optical modulator | |
IKEDA TATSURO | |
1992-10-15 | |
著作权人 | FUJITSU LTD |
专利号 | JP1992291316A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Refractive index modulation type optical modulator |
英文摘要 | PURPOSE:To generate large optical modulation effect with a low driving voltage and to realize optical modulation which is large in extinction ratio as to the refractive index modulation type optical modulator which is used for an optical communication or optical information processing, etc., and performs high-speed operation. CONSTITUTION:Quantum well layer units each consisting of a 1st quantum well layer W1, a 1st barrier layer B1 which contacts the 1st quantum well layer W1 and has lower electron energy at a point X or L than at a point GAMMA, and a 2nd quantum well layer W2 which contacts the 1st barrier layer B1 and is less in layer thickness than the 1st quantum well layer W1 or small in electron affinity and large in band gap energy are laminated periodically across 2nd barrier layers B2 which are enough to inhibit them from being bonded to adjacent quantum well layer units; and a voltage is applied to the quantum well layers to eliminate excitons and the refractive index to wavelength nearby an exciton peak is varied to modulate light. |
公开日期 | 1992-10-15 |
申请日期 | 1991-03-20 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/50686] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | IKEDA TATSURO. Refractive index modulation type optical modulator. JP1992291316A. 1992-10-15. |
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