| Tunnel junction utilizing GaPSb, AlGaPSb | |
| KIM, JIN K. | |
| 2006-08-01 | |
| 著作权人 | FINISAR CORPORATION |
| 专利号 | US7085298 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Tunnel junction utilizing GaPSb, AlGaPSb |
| 英文摘要 | A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, a p-layer of the tunnel junction including GaPSb or AlGaPSb; and a second mirror stack over the tunnel junction. The p-layer including GaPSb or AlGaPSb can be used to form a tunnel junction with an n-doped layer of InP or AlInAs, or with a lower bandgap material such as InGaAs, AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL. |
| 公开日期 | 2006-08-01 |
| 申请日期 | 2003-10-31 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KIM, JIN K.. Tunnel junction utilizing GaPSb, AlGaPSb. US7085298. 2006-08-01. |
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