Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors | |
Hu YB(胡云宾) ; Gao XK(高希珂) ; Di ZA(狄重安) ; Yang XD(杨笑迪) ; Zhang F(张峰) ; Liu YQ(刘云圻) ; Li HX(李洪祥) ; Zhu DB(朱道本) | |
刊名 | Chem. Mat. |
2011 | |
卷号 | 23期号:5页码:1204-1215 |
ISSN号 | 0897-4756 |
其他题名 | 硫杂环稠合、拉电子基团封端的核扩展的萘二酰亚胺衍生物可用于制备空气稳定、可溶液加工的n-型有机薄膜晶体管 |
通讯作者 | 高希珂 ; 狄重安 ; 朱道本 |
英文摘要 | Four families of core-expanded naphthalene diiinide (NDI) derivatives were designed and synthesized, namely, NDI-DTYM2 (1-7, of which 1 and 2 were previously reported), NDI-DTDCN2 (8 and 9), NDI-DTYCA2 (10 and 11), and NDI-DCT2 (12), where the NDI core fuses two 2-(1,3-dithiol-2-ylidene)malonitrile (DTYM) groups, two 1,4-dithiine-2,3-dicarbonitrile (DTDCN) groups, two alkyl 2-(1,3-dithiol-2-ylidene)cyanoacetate (DTYCA) groups, and two 2,3-dicyanothiophenes (DCT), respectively. The NDI cores of the present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organic thin film transistors based on compounds 3-12 operate well in air with the electron mobility ranging from similar to 10(-6) to 0.26 cm(2) V-1 s(-1), depending on the nature of the branched N-alkyl substituent and the pi-backbone structure. new |
学科主题 | 高分子化学 |
收录类别 | SCI |
原文出处 | http://dx.doi.org/10.1021/cm102850j |
语种 | 英语 |
WOS记录号 | WOS:000287767200019 |
公开日期 | 2013-08-23 |
内容类型 | 期刊论文 |
源URL | [http://202.127.28.38/handle/331003/28385] |
专题 | 上海有机化学研究所_高分子材料研究室 |
推荐引用方式 GB/T 7714 | Hu YB,Gao XK,Di ZA,et al. Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors[J]. Chem. Mat.,2011,23(5):1204-1215. |
APA | 胡云宾.,高希珂.,狄重安.,杨笑迪.,张峰.,...&朱道本.(2011).Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors.Chem. Mat.,23(5),1204-1215. |
MLA | 胡云宾,et al."Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors".Chem. Mat. 23.5(2011):1204-1215. |
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