Tunable laser device and method for manufacturing the same | |
AN, SHINMO | |
2019-04-30 | |
著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
专利号 | US10277008 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Tunable laser device and method for manufacturing the same |
英文摘要 | Provided is a tunable laser device. The tunable laser device includes a lower clad layer, first to third quantum well patterns disposed on the lower clad layer and arranged in a first direction parallel to a top surface of the lower clad layer, an upper clad layer disposed on the first quantum well pattern, and first grating patterns disposed between the third quantum well pattern and the lower clad layer. The first to third quantum well patterns are arranged in the first direction parallel to a top surface of the lower clad layer, the upper clad layer includes a p-type conductive clad layer, the upper clad layer includes an n-type conductive clad layer, and the third quantum well pattern is electrically intrinsic. When a reverse bias is applied to the upper clad layer, the third quantum well pattern, and the lower clad layer, the third quantum well pattern is changed in refractive index. |
公开日期 | 2019-04-30 |
申请日期 | 2018-04-18 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47868] |
专题 | 半导体激光器专利数据库 |
作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
推荐引用方式 GB/T 7714 | AN, SHINMO. Tunable laser device and method for manufacturing the same. US10277008. 2019-04-30. |
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