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	Semiconductor light-emitting device and manufacturing method for the same
	HIROSE, KAZUYOSHI; KUROSAKA, YOSHITAKA; SUGIYAMA, TAKAHIRO; TAKIGUCHI, YUU; NOMOTO, YOSHIRO
	2018-06-05
著作权人	HAMAMATSU PHOTONICS K.K.
专利号	US9991669
国家	美国
文献子类	授权发明
其他题名	Semiconductor light-emitting device and manufacturing method for the same
英文摘要	The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
公开日期	2018-06-05
申请日期	2017-07-21
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47847]
专题	半导体激光器专利数据库
作者单位	HAMAMATSU PHOTONICS K.K.
推荐引用方式 GB/T 7714	HIROSE, KAZUYOSHI,KUROSAKA, YOSHITAKA,SUGIYAMA, TAKAHIRO,et al. Semiconductor light-emitting device and manufacturing method for the same. US9991669. 2018-06-05.

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