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	Visible light surface emitting semiconductor laser
	OLBRIGHT, GREGORY R.; JEWELL, JACK L.
	1997-06-24
著作权人	VIXEL CORPORATION
专利号	US5642376
国家	美国
文献子类	授权发明
其他题名	Visible light surface emitting semiconductor laser
英文摘要	A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m lambda /2neff where m is an integer, lambda is the free-space wavelength of the laser radiation and neff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors. For radiation in the blue portion of the spectrum, the laser includes an active region of InGaN or GaN quantum wells and AlN/AlGaN mirrors.
公开日期	1997-06-24
申请日期	1993-03-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47819]
专题	半导体激光器专利数据库
作者单位	VIXEL CORPORATION
推荐引用方式 GB/T 7714	OLBRIGHT, GREGORY R.,JEWELL, JACK L.. Visible light surface emitting semiconductor laser. US5642376. 1997-06-24.

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