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	Combination index/gain guided semiconductor lasers
	SCIFRES, DONALD R.; STREIFER, WILLIAM; BURNHAM, ROBERT D.
	1993-12-28
著作权人	XEROX CORPORATION
专利号	CA1325670C
国家	加拿大
文献子类	授权发明
其他题名	Combination index/gain guided semiconductor lasers
英文摘要	ABSTRACT A semiconductor laser is provided with one or more layers forming an active region for supporting radiation propogating under lasing conditions in an optical cavity established between transverse end facets of the laser. The active region is characterized by having a combination index and gain guiding region. The regions between the central region and the end facets may be provided with sufficiently thin active region thickness to form a synthetic transparent or quantum well wave- guide so as not to be radiation absorbing due to the quantization of electron states.
公开日期	1993-12-28
申请日期	1984-01-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47783]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	SCIFRES, DONALD R.,STREIFER, WILLIAM,BURNHAM, ROBERT D.. Combination index/gain guided semiconductor lasers. CA1325670C. 1993-12-28.

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