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	Infrared detector using grey tin
	FARROW, ROBIN F. C.; ROBERTSON, DANIEL S.
	1984-08-28
著作权人	FARROW ; ROBIN F. C.
专利号	US4468685
国家	美国
文献子类	授权发明
其他题名	Infrared detector using grey tin
英文摘要	PCT No. PCT/GB81/00057 Sec. 371 Date Nov. 19, 1981 Sec. 102(e) Date Nov. 19, 1981 PCT Filed Mar. 26, 1981 PCT Pub. No. WO81/02811 PCT Pub. Date Oct. 1, 198A semiconductor device (1) including a monocrystalline region of semiconductor grey tin material (5) in intimate contact with a monocrystalline substrate (3). The region of semiconductor tin (5) is stabilized by interaction with the monocrystalline substrate (3) which has a crystallographic structure isomorphous with the structure of grey tin and an interatomic spacing matched to the interatomic spacing of the semiconductor region (5). The semiconductor region (5) may be further stabilized by inclusion of germanium dopant. The matching substrate (3) may be of indium antimonide, cadmium telluride, germanium or silicon material. Ohmic contact between a region of semiconductor tin (5) and a region of metal white tin (15) may be formed. Details of infra-red photovoltaic and photoconductive devices are given. The semiconductor region of tin may be grown by molecular beam epitaxy.
公开日期	1984-08-28
申请日期	1981-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47763]
专题	半导体激光器专利数据库
作者单位	1.FARROW 2.ROBIN F. C.
推荐引用方式 GB/T 7714	FARROW, ROBIN F. C.,ROBERTSON, DANIEL S.. Infrared detector using grey tin. US4468685. 1984-08-28.

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