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	Superluminescent diode and method for implementing the same
	OH, SU HWAN; KIM, MIN SU
	2017-03-07
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US9590135
国家	美国
文献子类	授权发明
其他题名	Superluminescent diode and method for implementing the same
英文摘要	A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
公开日期	2017-03-07
申请日期	2016-06-23
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47758]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	OH, SU HWAN,KIM, MIN SU. Superluminescent diode and method for implementing the same. US9590135. 2017-03-07.

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