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	Interband cascade light emitting device and method of making same
	BRUNO, JOHN D.; PHAM, JOHN T.
	2002-12-31
著作权人	ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE
专利号	US6500688
国家	美国
文献子类	授权发明
其他题名	Interband cascade light emitting device and method of making same
英文摘要	An interband cascade (IC) light emitting device having narrow ridges, and a method of growing and fabricating the IC light emitting device is disclosed. The IC light emitting device produced by the method of the present invention has 18 active regions separated by n-type injection regions and a plurality of coupled quantum wells of Al(In)Sb, InAs, and Ga(In)Sb layers. The IC light emitting device produced according to the present method has a differential external quantum efficiency of at least 500%, a peak power output of at least 4W/facet, a power conversion efficiency of at least 14% in continuous wave at 80K, a power conversion efficiency of at least 18% in pulsed wave operation at 80K, a continuous wave operation temperature of 142 K or less, a thermal resistance of from about 24-29 K*cm2/kW and continuous wave output powers of at least 100 mW/facet at temperatures above 77K.
公开日期	2002-12-31
申请日期	2001-03-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47715]
专题	半导体激光器专利数据库
作者单位	ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE
推荐引用方式 GB/T 7714	BRUNO, JOHN D.,PHAM, JOHN T.. Interband cascade light emitting device and method of making same. US6500688. 2002-12-31.

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