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	Semiconductor light-emitting device and method for manufacturing the same
	KASUGAI, HIDEKI; IKEDO, NORIO
	2012-05-29
著作权人	PANASONIC CORPORATION
专利号	US8189637
国家	美国
文献子类	授权发明
其他题名	Semiconductor light-emitting device and method for manufacturing the same
英文摘要	A semiconductor light-emitting device includes an n-type cladding layer formed on a substrate, an active layer formed on the n-type cladding layer and including a well layer and a barrier layer, and a p-type cladding layer formed on the active layer. The well layer is made of an indium-containing nitride semiconductor, and has a hydrogen concentration greater than that of the n-type cladding layer and less than that of the p-type cladding layer.
公开日期	2012-05-29
申请日期	2011-05-03
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47697]
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	KASUGAI, HIDEKI,IKEDO, NORIO. Semiconductor light-emitting device and method for manufacturing the same. US8189637. 2012-05-29.

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