QQ客服 官方微博 反馈留言

	Photo semiconductor device having a multi-quantum well structure
	NAKAMURA, HITOSHI; SAKANO, SHINJI; INOUE, HIROAKI; KATSUYAMA, TOSHIO; MATSUMURA, HIROYOSHI
	1989-06-20
著作权人	HITACHI CABLE, LTD.
专利号	US4840446
国家	美国
文献子类	授权发明
其他题名	Photo semiconductor device having a multi-quantum well structure
英文摘要	A multi-quantum well structure which is formed by laminating thin semiconductor layers is provided with means for injecting carriers in a direction which is parallel to the surface of the laminated thin semiconductor layers, whereby it is possible to obtain satisfactory changes in refractive index of the carrier injection portion. For example, if the total reflection region of an optical switch consisting of optical waveguides which cross each other is provided with a multi-quantum well structure wherein carriers are injected in a direction parallel to the surface of the well, the extinction ratio characteristics of the device can be improved.
公开日期	1989-06-20
申请日期	1987-09-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47672]
专题	半导体激光器专利数据库
作者单位	HITACHI CABLE, LTD.
推荐引用方式 GB/T 7714	NAKAMURA, HITOSHI,SAKANO, SHINJI,INOUE, HIROAKI,et al. Photo semiconductor device having a multi-quantum well structure. US4840446. 1989-06-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。