QQ客服 官方微博 反馈留言

	Intersubband quantum box semiconductor laser
	BOTEZ, DAN; ZORY, PETER S.; HSU, CHIA-FU
	1999-09-14
著作权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
专利号	US5953356
国家	美国
文献子类	授权发明
其他题名	Intersubband quantum box semiconductor laser
英文摘要	An intersubband quantum box laser structure includes an active structure having a two dimensional array of quantum boxes separated from one another in a semiconductor matrix. The quantum boxes are formed to suppress phonon-assisted transitions, and thus the transitions become primarily of the radiative type. Each quantum box has a multilayer structure including an electron injector, an active region with a quantum well, and an electron mirror. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The mirror reflects electrons at the higher energy level at which they were injected and transmits electrons at the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the active structure to provide conduction across the multiple layer structure and to provide optical confinement of the photons emitted. The semiconductor laser structure may be formed using various material systems, including InGaAs/InGaAsP structures grown on GaAs and InGaAs/AlInAs structures grown on InP.
公开日期	1999-09-14
申请日期	1997-11-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47670]
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,ZORY, PETER S.,HSU, CHIA-FU. Intersubband quantum box semiconductor laser. US5953356. 1999-09-14.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。