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	Ridge waveguide type semiconductor laser device
	KASUKAWA, AKIHIKO; NAMEGAYA, TAKESHI
	2004-05-04
著作权人	FURUKAWA ELECTRIC CO., LTD., THE
专利号	US6731663
国家	美国
文献子类	授权发明
其他题名	Ridge waveguide type semiconductor laser device
英文摘要	Provided is a ridge waveguide type semiconductor laser device in which fundamental transverse mode operation is stabilized and unstable jumps of a longitudinal mode (oscillation wavelength) never occur even with use of high optical output of 300 mW or more. The semiconductor laser device has a stacked structure composed of a substrate and layers thereon. The layers include a lower cladding layer, lower optical confinement layer, active layer, upper optical confinement layer, and upper cladding layer, which are built up in the order named. A ridge is formed on the upper cladding layer. The width (W) of the bottom ridge portion of the ridge ranges from 2.5 mum to 5.0 mum, and the distance from the bottom ridge portion to an active layer is adjusted to a value higher than 0.5 mum and not higher than 0.8 mum.
公开日期	2004-05-04
申请日期	2000-03-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47658]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式 GB/T 7714	KASUKAWA, AKIHIKO,NAMEGAYA, TAKESHI. Ridge waveguide type semiconductor laser device. US6731663. 2004-05-04.

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