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	A semiconductor laser apparatus
	YOSHIDA, TOSHIHIKO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI 101 KYOBATE MANSION; MATSUI, SADAYOSHI
	1990-01-03
著作权人	SHARP KABUSHIKI KAISHA
专利号	EP0208527B1
国家	欧洲专利局
文献子类	授权发明
其他题名	A semiconductor laser apparatus
英文摘要	A semiconductor laser apparatus comprising a laser-oscillating area (31) and a light-detecting area (32), both of which are formed on a single substrate (20). The laser-oscillating area (31) and said light-detecting area (32) have a common semiconductor layer (24) of a first polarity disposed on the substrate (20) and a common active layer (25) disposed on the semiconductor layer (24). The active area (25) of the laser-oscillating area (31) and/or said light-detecting area (32) has a cladding layer (26) of a second polarity disposed thereon. The laser-oscillating area (31) and the light-detecting area (32) are repeated by a groove (20) extending from the upper face of the cladding layer (26) to a region below the active layer (25). The active layer (25a) of the laser-oscillation area (31) is flat while the active layer (25b) of the light- datacting area (32) is sloped.
公开日期	1990-01-03
申请日期	1986-07-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47639]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YOSHIDA, TOSHIHIKO,TAKIGUCHI, HARUHISA,KANEIWA, SHINJI 101 KYOBATE MANSION,et al. A semiconductor laser apparatus. EP0208527B1. 1990-01-03.

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