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	Wavelength-tunable distributed Bragg reflector semiconductor laser
	AOYAGI, TOSHITAKA; ARIMOTO, SATOSHI
	1992-10-20
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5157681
国家	美国
文献子类	授权发明
其他题名	Wavelength-tunable distributed Bragg reflector semiconductor laser
英文摘要	A wavelength-tunable distributed Bragg reflector semiconductor laser including serially disposed active, phase control, and wavelength tuning sections includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor light guide layer disposed on said substrate at least in the phase control and wavelength tuning sections of the laser including at least one quantum well layer sandwiched between quantum barrier layers; a first conductivity type semiconductor barrier layer and a semiconductor active layer serially disposed on the light guide layer in the active section of the laser; a second conductivity type semiconductor cladding layer disposed on the light guide layer at least in the phase control and wavelength tuning sections of the laser, the light guide layer including a Bragg reflector in the wavelength tuning section of the laser; a first electrode disposed on the substrate; and second, third, and fourth electrodes disposed on the cladding layer in the active, phase control, and wavelength tuning sections of the laser, respectively.
公开日期	1992-10-20
申请日期	1991-06-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47548]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,ARIMOTO, SATOSHI. Wavelength-tunable distributed Bragg reflector semiconductor laser. US5157681. 1992-10-20.

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