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	Optical Semiconductor device with carrier recombination layer
	MORIMOTO, TAKAO
	1999-06-29
著作权人	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
专利号	US5917846
国家	美国
文献子类	授权发明
其他题名	Optical Semiconductor device with carrier recombination layer
英文摘要	A p-InP buffer layer is formed on a p-type InP substrate. A selective growth layer consisted of a p-InP clad layer, a SCH-strained MQW layer, and an n-InP clad layer sequentially in stripe form is formed on the buffer layer. On the surface of the buffer layer at both sides of the selective growth portion, a p-InP buried layer, an n-InP blocking layer, a p-InP blocking layer and SCH-MQW carrier recombination layer are selectively grown in the sequential order in a manner that those layer are not grown on the upper surface of the selective growth portion. With burying upper portions of these layers, an n-InP clad burying layer, and an n-InGaAsP contact layer are formed. Then, a surface electrode is formed with covering the entire surface. Also, a back surface electrode is formed on the backside surface of the p-type InP substrate.
公开日期	1999-06-29
申请日期	1997-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47505]
专题	半导体激光器专利数据库
作者单位	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
推荐引用方式 GB/T 7714	MORIMOTO, TAKAO. Optical Semiconductor device with carrier recombination layer. US5917846. 1999-06-29.

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