Optical Semiconductor device with carrier recombination layer | |
MORIMOTO, TAKAO | |
1999-06-29 | |
著作权人 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
专利号 | US5917846 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Optical Semiconductor device with carrier recombination layer |
英文摘要 | A p-InP buffer layer is formed on a p-type InP substrate. A selective growth layer consisted of a p-InP clad layer, a SCH-strained MQW layer, and an n-InP clad layer sequentially in stripe form is formed on the buffer layer. On the surface of the buffer layer at both sides of the selective growth portion, a p-InP buried layer, an n-InP blocking layer, a p-InP blocking layer and SCH-MQW carrier recombination layer are selectively grown in the sequential order in a manner that those layer are not grown on the upper surface of the selective growth portion. With burying upper portions of these layers, an n-InP clad burying layer, and an n-InGaAsP contact layer are formed. Then, a surface electrode is formed with covering the entire surface. Also, a back surface electrode is formed on the backside surface of the p-type InP substrate. |
公开日期 | 1999-06-29 |
申请日期 | 1997-03-26 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47505] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
推荐引用方式 GB/T 7714 | MORIMOTO, TAKAO. Optical Semiconductor device with carrier recombination layer. US5917846. 1999-06-29. |
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