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	Method of passivating etched mirror facets of semiconductor laser diodes
	BUCHMANN, PETER L.; WEBB, DAVID J.; VETTIGER, PETER
	1993-01-05
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK
专利号	US5177031
国家	美国
文献子类	授权发明
其他题名	Method of passivating etched mirror facets of semiconductor laser diodes
英文摘要	A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
公开日期	1993-01-05
申请日期	1991-05-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47501]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK
推荐引用方式 GB/T 7714	BUCHMANN, PETER L.,WEBB, DAVID J.,VETTIGER, PETER. Method of passivating etched mirror facets of semiconductor laser diodes. US5177031. 1993-01-05.

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