Method of passivating etched mirror facets of semiconductor laser diodes | |
BUCHMANN, PETER L.; WEBB, DAVID J.; VETTIGER, PETER | |
1993-01-05 | |
著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK |
专利号 | US5177031 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Method of passivating etched mirror facets of semiconductor laser diodes |
英文摘要 | A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror. |
公开日期 | 1993-01-05 |
申请日期 | 1991-05-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47501] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK |
推荐引用方式 GB/T 7714 | BUCHMANN, PETER L.,WEBB, DAVID J.,VETTIGER, PETER. Method of passivating etched mirror facets of semiconductor laser diodes. US5177031. 1993-01-05. |
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