QQ客服 官方微博 反馈留言

	面発光型半導体レーザー装置
	伊賀 健一; 石川 徹; 茨木 晃; 古沢 浩太郎
	1997-11-14
著作权人	科学技術振興事業団
专利号	JP2717212B2
国家	日本
文献子类	授权发明
其他题名	面発光型半導体レーザー装置
英文摘要	PURPOSE:To prevent the increase of ohmic contact in an electrode, and to increase the area of electrode by providing an injection layer and an ohmic contact layer, said injection layer facing an ohmic contact layer and an active layer, and injecting carrier, which is injected by an ohmic contact between an electrode and the ohmic contact layer, into the active layer, while said ohmic contact layer is arranged so as to face an injection layer except a part facing a reflection mirror. CONSTITUTION:A columunar mesa part constituted by laminating a P-type active layer 2 and a P-type clad layer 3 is formed on an N-type clad layer The mesa part is buried in a P-type block layer 4 and an N-type block layer 5 which are laminated for current constriction, thereby forming a semiconductor laser device of buried structure. A current injection layer 6 is formed on the mesa part and a current constricting layer surrounding the mesa part. A cap layer 71 is formed on the current injection layer 6 except a part corresponding to the mesa part. A reflection mirror 9 composed of TiO2/SiO2 is arranged on the current injection layer 6 corresponding to the mesa part. An electrode 8 composed of Au/Zn/Au is laminated only on the cap layer 7
公开日期	1998-02-18
申请日期	1988-08-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47496]
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	伊賀 健一,石川 徹,茨木 晃,等. 面発光型半導体レーザー装置. JP2717212B2. 1997-11-14.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。