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	Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
	TANAKA, AKIRA; SHIOZAWA, HIDEO; WATANABE, MINORU; GEN-EI, KOICHI; TANAKA, HIROKAZU
	2007-11-13
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US7295588
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
英文摘要	The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.
公开日期	2007-11-13
申请日期	2003-11-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47492]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	TANAKA, AKIRA,SHIOZAWA, HIDEO,WATANABE, MINORU,et al. Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device. US7295588. 2007-11-13.

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